smd type transistors 1 www.kexin.com.cn pnp transistor 2SA1664 features collector current i c =-0.8a power dissipation p c =0.5w absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -35 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -5 v collector current i c -0.8 a collector power dissipation p c 0.5 w junction temperature t j 150 storage temperature t stg -55 to +150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v cbo i c =-1ma,i e =0 -35 v collector-emitter breakdown voltage v ceo i c =-10ma,i b =0 -30 v emitter-base breakdown voltage v ebo i e =-1ma,i c =0 -5 v collector-base cutoff current i cbo v cb =-35v,i e =0 -0.1 a emitter cutoff current i ebo v eb =-5v,i c =0 -0.1 a v ce =-1v,i c = -100 ma 100 320 v ce =-1v,i c = -700 ma 35 collector-emitter saturation voltage v ce(sat) i c = -500 ma, i b =-20ma -0.7 v base emitter voltage v be v ce =-1v,i c =-10ma -0.5 -0.8 v collector output capacitance c ob v cb = -10v, i e =0,f=1mhz 120 mhz transition frequency f t v ce =-5v,i c =-10ma 19 pf dc current gain h fe h fe classification marking ro ry rank o y h fe 100 200 160 320 www.datasheet.in
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